SPN03N60C3
detaildesc

SPN03N60C3

Infineon Technologies

Produkt-Nr.:

SPN03N60C3

Paket:

PG-SOT223-4

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 650V 700MA SOT223-4

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Supplier Device Package PG-SOT223-4
Vgs(th) (Max) @ Id 3.9V @ 135µA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SPN03N