BSC200P03LSG
Infineon Technologies
Produkt-Nr.:
BSC200P03LSG
Hersteller:
Paket:
PG-TDSON-8-6
Charge:
-
Datenblatt:
-
Beschreibung:
P-CHANNEL POWER MOSFET
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 15 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.5A, 10V |
| Supplier Device Package | PG-TDSON-8-6 |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | OptiMOS® |
| Power Dissipation (Max) | 2.5W (Ta), 63W (Tc) |
| Package / Case | 8-PowerTDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 12.5A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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