SPB10N10
Infineon Technologies
Produkt-Nr.:
SPB10N10
Hersteller:
Paket:
PG-TO263-3-2
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 100V 10.3A TO263-3
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| Supplier Device Package | PG-TO263-3-2 |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | SIPMOS® |
| Power Dissipation (Max) | 50W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SPB10N |
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