SIZ904DT-T1-GE3
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SIZ904DT-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SIZ904DT-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

6-PowerPair™

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2N-CH 30V 12A POWERPAIR

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V
Supplier Device Package 6-PowerPair™
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30V
Series TrenchFET®
Package / Case 6-PowerPair™
Technology MOSFET (Metal Oxide)
Power - Max 20W, 33W
Current - Continuous Drain (Id) @ 25°C 12A, 16A
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SIZ904