SISF20DN-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SISF20DN-T1-GE3
Hersteller:
Paket:
PowerPAK® 1212-8SCD Dual
Charge:
-
Datenblatt:
Beschreibung:
MOSFET DL N-CH 60V PPK 1212-8SCD
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 7A, 10V |
| Supplier Device Package | PowerPAK® 1212-8SCD Dual |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | TrenchFET® Gen IV |
| Package / Case | PowerPAK® 1212-8SCD Dual |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 52A (Tc) |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SISF20 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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