SI9934BDY-T1-GE3
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SI9934BDY-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SI9934BDY-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

8-SOIC

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2P-CH 12V 4.8A 8SOIC

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 35mOhm @ 6.4A, 4.5V
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 1.4V @ 250µA
Drain to Source Voltage (Vdss) 12V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1.1W
Current - Continuous Drain (Id) @ 25°C 4.8A
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SI9934