SI7949DP-T1-GE3
detaildesc

SI7949DP-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SI7949DP-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SO-8 Dual

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2P-CH 60V 3.2A PPAK SO-8

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 64mOhm @ 5A, 10V
Supplier Device Package PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 60V
Series TrenchFET®
Package / Case PowerPAK® SO-8 Dual
Technology MOSFET (Metal Oxide)
Power - Max 1.5W
Current - Continuous Drain (Id) @ 25°C 3.2A
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SI7949