SI4967DY-T1-E3
Vishay Siliconix
Produkt-Nr.:
SI4967DY-T1-E3
Hersteller:
Paket:
8-SOIC
Charge:
-
Datenblatt:
Beschreibung:
MOSFET 2P-CH 12V 8SOIC
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7.5A, 4.5V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Drain to Source Voltage (Vdss) | 12V |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Current - Continuous Drain (Id) @ 25°C | - |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4967 |
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