SI4953ADY-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SI4953ADY-T1-GE3
Hersteller:
Paket:
8-SOIC
Charge:
-
Datenblatt:
Beschreibung:
MOSFET 2P-CH 30V 3.7A 8-SOIC
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| FET Feature | Logic Level Gate |
| Configuration | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4.9A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Drain to Source Voltage (Vdss) | 30V |
| Series | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Current - Continuous Drain (Id) @ 25°C | 3.7A |
| Mfr | Vishay Siliconix |
| Package | Cut Tape (CT) |
| Base Product Number | SI4953 |
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15,000 ㎡Lager auf Lager
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