SI3529DV-T1-E3
Vishay Siliconix
Produkt-Nr.:
SI3529DV-T1-E3
Hersteller:
Paket:
6-TSOP
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N/P-CH 40V 2.5A 6-TSOP
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 205pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.2A, 10V |
| Supplier Device Package | 6-TSOP |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 40V |
| Series | TrenchFET® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 1.95A |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SI3529 |
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