SDS065J006S3
detaildesc

SDS065J006S3

Sanan Semiconductor

Produkt-Nr.:

SDS065J006S3

Paket:

4-DFN (8x8)

Charge:

-

Datenblatt:

-

Beschreibung:

DIODE 650V-6A DFN88

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 310pF @ 0V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package 4-DFN (8x8)
Current - Reverse Leakage @ Vr 18 µA @ 650 V
Series -
Package / Case 4-PowerVSFN
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
Mfr Sanan Semiconductor
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 23A
Operating Temperature - Junction -55°C ~ 175°C