SCTW40N120G2V
STMicroelectronics
Produkt-Nr.:
SCTW40N120G2V
Hersteller:
Paket:
HiP247™
Charge:
-
Datenblatt:
Beschreibung:
SILICON CARBIDE POWER MOSFET 120
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 200°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| Supplier Device Package | HiP247™ |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 278W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Mfr | STMicroelectronics |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
Empfohlene Teile
.jpg)
SCTW40N120G2V Verwandte Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 2
Grundkenntnisse in Kristalloszillatoren, Schaltungsdesign, Ursachen für Vibrationsausfall, Schaltungsprinzipien, Kristallfrequenz und Anwendungen digitaler Schaltungen (Download von Kristalloszillatordaten)
2024-04-08 2
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 4
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 2
2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
Schnelle Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号