SCTW100N65G2AG
STMicroelectronics
Produkt-Nr.:
SCTW100N65G2AG
Hersteller:
Paket:
HiP247™
Charge:
-
Datenblatt:
Beschreibung:
SICFET N-CH 650V 100A HIP247
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 200°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| Supplier Device Package | HiP247™ |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | Automotive, AEC-Q101 |
| Power Dissipation (Max) | 420W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Mfr | STMicroelectronics |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | SCTW100 |
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