SCT040H65G3AG
STMicroelectronics
Produkt-Nr.:
SCT040H65G3AG
Hersteller:
Paket:
H2PAK-7
Charge:
-
Datenblatt:
Beschreibung:
AUTOMOTIVE-GRADE SILICON CARBIDE
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
| Supplier Device Package | H2PAK-7 |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | Automotive, AEC-Q101 |
| Power Dissipation (Max) | 221W (Tc) |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Mfr | STMicroelectronics |
| Vgs (Max) | +18V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tape & Reel (TR) |
| Base Product Number | SCT040 |
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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