QS8M12TCR
Rohm Semiconductor
Produkt-Nr.:
QS8M12TCR
Hersteller:
Paket:
TSMT8
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N/P-CH 30V 4A TSMT8
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 5V |
| Mounting Type | Surface Mount |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4A, 10V |
| Supplier Device Package | TSMT8 |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Series | - |
| Package / Case | 8-SMD, Flat Lead |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Mfr | Rohm Semiconductor |
| Package | Tape & Reel (TR) |
| Base Product Number | QS8M12 |
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15,000 ㎡Lager auf Lager
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