HP8KE7TB1
detaildesc

HP8KE7TB1

Rohm Semiconductor

Produkt-Nr.:

HP8KE7TB1

Hersteller:

Rohm Semiconductor

Paket:

8-HSOP

Charge:

-

Datenblatt:

-

Beschreibung:

100V 24A, DUAL NCH+NCH, HSOP8, P

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : Bitte Anfrage

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 19.6mOhm @ 10A, 10V
Supplier Device Package 8-HSOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 100V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 3W (Ta), 26W (Tc)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 24A (Tc)
Mfr Rohm Semiconductor
Package Tape & Reel (TR)