PMZB350UPE,315
NXP USA Inc.
Produkt-Nr.:
PMZB350UPE,315
Hersteller:
Paket:
DFN1006B-3
Charge:
-
Datenblatt:
Beschreibung:
NOW NEXPERIA PMZB350UPE - SMALL
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 127 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 300mA, 4.5V |
| Supplier Device Package | DFN1006B-3 |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | - |
| Power Dissipation (Max) | 360mW (Ta), 3.125W (Tc) |
| Package / Case | 3-XFDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Package | Bulk |
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15,000 ㎡Lager auf Lager
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