PMV31XN,215
detaildesc

PMV31XN,215

NXP USA Inc.

Produkt-Nr.:

PMV31XN,215

Hersteller:

NXP USA Inc.

Paket:

SOT-23 (TO-236AB)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 20V 5.9A TO236AB

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V
Supplier Device Package SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id 1.5V @ 1mA
Drain to Source Voltage (Vdss) 20 V
Series TrenchMOS™
Power Dissipation (Max) 280mW (Tj)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Mfr NXP USA Inc.
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number PMV3