PMGD8000LN,115
detaildesc

PMGD8000LN,115

NXP USA Inc.

Produkt-Nr.:

PMGD8000LN,115

Hersteller:

NXP USA Inc.

Paket:

6-TSSOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2N-CH 30V 0.125A 6TSSOP

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 8Ohm @ 10mA, 4V
Supplier Device Package 6-TSSOP
Vgs(th) (Max) @ Id 1.5V @ 100µA
Drain to Source Voltage (Vdss) 30V
Series TrenchMOS™
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 200mW
Current - Continuous Drain (Id) @ 25°C 125mA
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Base Product Number PMGD8