PHKD13N03LT,518
NXP USA Inc.
Produkt-Nr.:
PHKD13N03LT,518
Hersteller:
Paket:
8-SO
Charge:
-
Datenblatt:
-
Beschreibung:
SMALL SIGNAL FIELD-EFFECT TRANSI
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 752pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 5V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain to Source Voltage (Vdss) | 30V |
| Series | TrenchMOS™ |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.57W |
| Current - Continuous Drain (Id) @ 25°C | 10.4A |
| Mfr | NXP USA Inc. |
| Package | Bulk |
| Base Product Number | PHKD13 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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