PH3830L,115
detaildesc

PH3830L,115

NXP USA Inc.

Produkt-Nr.:

PH3830L,115

Hersteller:

NXP USA Inc.

Paket:

LFPAK56, Power-SO8

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 98A LFPAK56

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3190 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 3.8mOhm @ 25A, 10V
Supplier Device Package LFPAK56, Power-SO8
Vgs(th) (Max) @ Id 2V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series TrenchMOS™
Power Dissipation (Max) 62.5W (Tc)
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Mfr NXP USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tape & Reel (TR)
Base Product Number PH38