NTD4856N-35G
onsemi
Produkt-Nr.:
NTD4856N-35G
Hersteller:
Paket:
I-Pak
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 25V 13.3A/89A IPAK
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2241 pF @ 12 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V |
| Supplier Device Package | I-Pak |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 25 V |
| Series | - |
| Power Dissipation (Max) | 1.33W (Ta), 60W (Tc) |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta), 89A (Tc) |
| Mfr | onsemi |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
| Base Product Number | NTD48 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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