NTHD3101FT3G
detaildesc

NTHD3101FT3G

onsemi

Produkt-Nr.:

NTHD3101FT3G

Hersteller:

onsemi

Paket:

ChipFET™

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 3.2A CHIPFET

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V
Supplier Device Package ChipFET™
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 1.1W (Ta)
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.2A (Tj)
Mfr onsemi
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number NTHD31