NTBGS002N06C
detaildesc

NTBGS002N06C

onsemi

Produkt-Nr.:

NTBGS002N06C

Hersteller:

onsemi

Paket:

D2PAK (TO-263)

Charge:

-

Datenblatt:

pdf

Beschreibung:

POWER MOSFET, 60 V, 2.2 M?, 211

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4620 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 62.1 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 2.1mOhm @ 45A, 12V
Supplier Device Package D2PAK (TO-263)
Vgs(th) (Max) @ Id 4V @ 225µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 3.7W (Ta), 178W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 211A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Package Tape & Reel (TR)