MTD6P10E
detaildesc

MTD6P10E

onsemi

Produkt-Nr.:

MTD6P10E

Hersteller:

onsemi

Paket:

DPAK

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 100V 6A DPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 660mOhm @ 3A, 10V
Supplier Device Package DPAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 1.75W (Ta), 50W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr onsemi
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number MTD6P