IRLR3410CPBF
detaildesc

IRLR3410CPBF

Infineon Technologies

Produkt-Nr.:

IRLR3410CPBF

Paket:

D-Pak

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 100V 17A DPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 105mOhm @ 10A, 10V
Supplier Device Package D-Pak
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series HEXFET®
Power Dissipation (Max) -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Mfr Infineon Technologies
Package Tube