IRL5602L
detaildesc

IRL5602L

Infineon Technologies

Produkt-Nr.:

IRL5602L

Paket:

TO-262

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 24A TO262

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 42mOhm @ 12A, 4.5V
Supplier Device Package TO-262
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series HEXFET®
Power Dissipation (Max) -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tube