IRL3103D1SPBF
detaildesc

IRL3103D1SPBF

Infineon Technologies

Produkt-Nr.:

IRL3103D1SPBF

Paket:

D2PAK

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 64A D2PAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 14mOhm @ 34A, 10V
Supplier Device Package D2PAK
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series FETKY™
Power Dissipation (Max) 3.1W (Ta), 89W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube