IRFL1006
detaildesc

IRFL1006

Infineon Technologies

Produkt-Nr.:

IRFL1006

Paket:

SOT-223

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 1.6A SOT223

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V
Supplier Device Package SOT-223
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series HEXFET®
Power Dissipation (Max) 1W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube