IRFIZ48VPBF
detaildesc

IRFIZ48VPBF

Infineon Technologies

Produkt-Nr.:

IRFIZ48VPBF

Paket:

TO-220AB Full-Pak

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 39A TO220AB FP

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1985 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 12mOhm @ 43A, 10V
Supplier Device Package TO-220AB Full-Pak
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series HEXFET®
Power Dissipation (Max) 43W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube