IRF7324D1PBF
detaildesc

IRF7324D1PBF

Infineon Technologies

Produkt-Nr.:

IRF7324D1PBF

Paket:

8-SO

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 2.2A 8SO

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 20 V
Series FETKY™
Power Dissipation (Max) 2W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Package Tube