IRF6633ATR1PBF
detaildesc

IRF6633ATR1PBF

Infineon Technologies

Produkt-Nr.:

IRF6633ATR1PBF

Paket:

DIRECTFET™ MU

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 20V 16A DIRECTFET

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1410 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 5.6mOhm @ 16A, 10V
Supplier Device Package DIRECTFET™ MU
Vgs(th) (Max) @ Id 2.2V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series HEXFET®
Power Dissipation (Max) 2.3W (Ta), 42W (Tc)
Package / Case DirectFET™ Isometric MU
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 69A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)