IPP03N03LA
detaildesc

IPP03N03LA

Infineon Technologies

Produkt-Nr.:

IPP03N03LA

Paket:

PG-TO220-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 25V 80A TO220-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7027 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 3mOhm @ 55A, 10V
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 2V @ 100µA
Drain to Source Voltage (Vdss) 25 V
Series OptiMOS™
Power Dissipation (Max) 150W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Box (TB)
Base Product Number IPP03N