G3R160MT17J
GeneSiC Semiconductor
Produkt-Nr.:
G3R160MT17J
Hersteller:
Paket:
TO-263-7
Charge:
-
Datenblatt:
Beschreibung:
SIC MOSFET N-CH 22A TO263-7
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1272 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 12A, 15V |
| Supplier Device Package | TO-263-7 |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Drain to Source Voltage (Vdss) | 1700 V |
| Series | G3R™ |
| Power Dissipation (Max) | 187W (Tc) |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Mfr | GeneSiC Semiconductor |
| Vgs (Max) | ±15V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Package | Tube |
| Base Product Number | G3R160 |
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30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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