FDMS4D0N12C
detaildesc

FDMS4D0N12C

onsemi

Produkt-Nr.:

FDMS4D0N12C

Hersteller:

onsemi

Paket:

8-PQFN (5x6)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 120V 18.5A/114A 8QFN

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6460 pF @ 60 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 4mOhm @ 67A, 10V
Supplier Device Package 8-PQFN (5x6)
Vgs(th) (Max) @ Id 4V @ 370A
Drain to Source Voltage (Vdss) 120 V
Series PowerTrench®
Power Dissipation (Max) 2.7W (Ta), 106W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 114A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number FDMS4