FCP150N65F
detaildesc

FCP150N65F

onsemi

Produkt-Nr.:

FCP150N65F

Hersteller:

onsemi

Paket:

TO-220-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 650V 24A TO220-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3737 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V
Supplier Device Package TO-220-3
Vgs(th) (Max) @ Id 5V @ 2.4mA
Drain to Source Voltage (Vdss) 650 V
Series HiPerFET™, Polar™
Power Dissipation (Max) 298W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FCP150