FCP125N65S3
detaildesc

FCP125N65S3

onsemi

Produkt-Nr.:

FCP125N65S3

Hersteller:

onsemi

Paket:

TO-220-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

POWER MOSFET, N-CHANNEL, SUPERFE

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1940 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
Supplier Device Package TO-220-3
Vgs(th) (Max) @ Id 4.5V @ 2.4mA
Drain to Source Voltage (Vdss) 650 V
Series SuperFET® III
Power Dissipation (Max) 181W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk