BUK9Y113-100E,115
NXP USA Inc.
Produkt-Nr.:
BUK9Y113-100E,115
Hersteller:
Paket:
LFPAK56, Power-SO8
Charge:
-
Datenblatt:
Beschreibung:
TRANSISTOR >30MHZ
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 5A, 10V |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Power Dissipation (Max) | 45W (Tc) |
| Package / Case | SC-100, SOT-669 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Package | Bulk |
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15,000 ㎡Lager auf Lager
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