BSO612CVG
detaildesc

BSO612CVG

Infineon Technologies

Produkt-Nr.:

BSO612CVG

Paket:

PG-DSO-8

Charge:

-

Datenblatt:

-

Beschreibung:

BSO612 - 20V-60V COMPLEMENTARY M

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 340pF, 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V, 16nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Supplier Device Package PG-DSO-8
Vgs(th) (Max) @ Id 4V @ 20µA, 4V @ 450µA
Drain to Source Voltage (Vdss) 60V
Series SIPMOS®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta)
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 2A (Ta)
Mfr Infineon Technologies
Package Bulk
Base Product Number BSO612