BSO303P
Infineon Technologies
Produkt-Nr.:
BSO303P
Hersteller:
Paket:
PG-DSO-8
Charge:
-
Datenblatt:
-
Beschreibung:
P-CHANNEL POWER MOSFET
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1761pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 72.5nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 10V |
| Supplier Device Package | PG-DSO-8 |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Drain to Source Voltage (Vdss) | 30V |
| Series | OptiMOS™ |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Mfr | Infineon Technologies |
| Package | Bulk |
| Base Product Number | BSO303 |
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15,000 ㎡Lager auf Lager
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