BSO072N03S
detaildesc

BSO072N03S

Infineon Technologies

Produkt-Nr.:

BSO072N03S

Paket:

PG-DSO-8

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 12A 8DSO

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3230 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 6.8mOhm @ 15A, 10V
Supplier Device Package PG-DSO-8
Vgs(th) (Max) @ Id 2V @ 45µA
Drain to Source Voltage (Vdss) 30 V
Series OptiMOS™
Power Dissipation (Max) 1.56W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)