ALD212900APAL
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ALD212900APAL

Advanced Linear Devices Inc.

Produkt-Nr.:

ALD212900APAL

Paket:

8-PDIP

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2N-CH 10.6V 0.08A 8DIP

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 0°C ~ 70°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual) Matched Pair
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 14Ohm
Supplier Device Package 8-PDIP
Vgs(th) (Max) @ Id 10mV @ 20µA
Drain to Source Voltage (Vdss) 10.6V
Series EPAD®, Zero Threshold™
Package / Case 8-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Power - Max 500mW
Current - Continuous Drain (Id) @ 25°C 80mA
Mfr Advanced Linear Devices Inc.
Package Tube
Base Product Number ALD212900