ALD111933SAL
detaildesc

ALD111933SAL

Advanced Linear Devices Inc.

Produkt-Nr.:

ALD111933SAL

Paket:

8-SOIC

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2N-CH 10.6V 8SOIC

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 61

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $4.655

    $4.655

  • 10

    $4.17905

    $41.7905

  • 100

    $3.42399

    $342.399

  • 500

    $2.914771

    $1457.3855

  • 1000

    $2.458239

    $2458.239

  • 2000

    $2.335328

    $4670.656

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 0°C ~ 70°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual) Matched Pair
Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 500Ohm @ 5.9V
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 3.35V @ 1µA
Drain to Source Voltage (Vdss) 10.6V
Series EPAD®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 500mW
Current - Continuous Drain (Id) @ 25°C -
Mfr Advanced Linear Devices Inc.
Package Tube
Base Product Number ALD111933