TPH3206PD

Transphorm

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TPH3206PD

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Forfait:

TO-220AB

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Description:

GANFET N-CH 600V 17A TO220AB

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En stock : 93

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 480 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 8V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	2.6V @ 500µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	96W (Tc)
Package / Case	TO-220-3
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	Transphorm
Vgs (Max)	±18V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TPH3206