TP65H300G4LSG-TR

Transphorm

Produit non:

TP65H300G4LSG-TR

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Forfait:

3-PQFN (8x8)

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Description:

GANFET N-CH 650V 6.5A 3PQFN

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En stock : 6707

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.6 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	312mOhm @ 5A, 8V
Supplier Device Package	3-PQFN (8x8)
Vgs(th) (Max) @ Id	2.6V @ 500µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	21W (Tc)
Package / Case	3-PowerDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	6.5A (Tc)
Mfr	Transphorm
Vgs (Max)	±18V
Drive Voltage (Max Rds On, Min Rds On)	8V
Package	Cut Tape (CT)
Base Product Number	TP65H300