TP65H050WS

Transphorm

Produit non:

TP65H050WS

Fabricant:

Forfait:

TO-247-3

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Fiche technique:

Description:

GANFET N-CH 650V 34A TO247-3

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En stock : 372

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	4.8V @ 700µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	119W (Tc)
Package / Case	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube
Base Product Number	TP65H050