TP65H035WS

Transphorm

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TP65H035WS

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Forfait:

TO-247-3

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Description:

GANFET N-CH 650V 46.5A TO247-3

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En stock : 873

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	4.8V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	156W (Tc)
Package / Case	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube
Base Product Number	TP65H035