APTM100UM45DAG

Microchip Technology

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APTM100UM45DAG

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SP6

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Description:

MOSFET N-CH 1000V 215A SP6

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En stock : 2

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	42700 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1602 nC @ 10 V
Mounting Type	Chassis Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	52mOhm @ 107.5A, 10V
Supplier Device Package	SP6
Vgs(th) (Max) @ Id	5V @ 30mA
Drain to Source Voltage (Vdss)	1000 V
Series	POWER MOS 7®
Power Dissipation (Max)	5000W (Tc)
Package / Case	SP6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	215A (Tc)
Mfr	Microchip Technology
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	APTM100