APT29F100B2

Microchip Technology

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APT29F100B2

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T-MAX™ [B2]

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Description:

MOSFET N-CH 1000V 30A T-MAX

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	8500 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	440mOhm @ 16A, 10V
Supplier Device Package	T-MAX™ [B2]
Vgs(th) (Max) @ Id	5V @ 2.5mA
Drain to Source Voltage (Vdss)	1000 V
Series	POWER MOS 8™
Power Dissipation (Max)	1040W (Tc)
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Microchip Technology
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	APT29F100