SPP80N06S2L-05
detaildesc

SPP80N06S2L-05

Infineon Technologies

Producto No:

SPP80N06S2L-05

Paquete:

PG-TO220-3-1

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 55V 80A TO220-3

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7530 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V
Supplier Device Package PG-TO220-3-1
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 55 V
Series OptiMOS™
Power Dissipation (Max) 300W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number SPP80N